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(a) CL images of V defects and dark zones in the QW in front view of the mirror facet, and (b)  DLDs along the cavity starting from the V defects (top view).
(a) Profiles of temperature and (b) Tresca stress component for varying heat source power densities (4, 8, and ) superimposed to the modeled structure. Note that the heat power is related to the heat generation at the facet defect. The substrate and heat sink do not appear in the figure.
Experimental yield strengths of GaAs from Suzuki (Ref. 12 ) (◯) and Swaminathan (Ref. 11 ) (◻) data, and calculated maximum Tresca stress component without (●) and with (◼) packaging stress vs the local temperature at the facet defect. Note the temperature threshold damage lowering under packaging stress. (The lines are guides for the eyes.)
Main parameters used for the calculations, : thermal expansion coefficient, : thermal conductivity, and : Young’s modulus. Data from Ref. 9 and references therein.
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