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Schematic structure layouts (not to scale) with the nominal layer thicknesses. The QD area in structure C consists of the sequence as indicated by the dotted lines.
Results of time-resolved PL measurements on the QD ensemble. Left panel: transients recorded for the QDs (structure B). The pulsed excitation (pulse width ) occurs at . Right panel: decay time in dependence on temperature for QDs with two different barrier designs (squares: sample B, triangles: sample A).
Micro-EL spectrum of a single QD measured through a nanoaperture in the metal contact of the device (structure C) for different temperatures. Inset: threshold voltage of the single QD light-emitting device vs temperature.
Top: temperature-dependent shift of the single QD EL emission peak. The red line is a fit according to the Varshni formula for the bandgap. Bottom: comparison of the FWHM of SQD emission measured by EL (black squares) and PL (red circles).
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