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Gate-field-induced phase transitions in : Monoclinic metal phase separation and switchable infrared reflections
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) MOS device in configuration. As shown is the (100) substrate, the gate oxide, and the with top Ohmic metal contact. In addition, another Ohmic contact is formed to the back of the substrate. (b) Opened optical windows in the top metals, in each area of and spaced by , are formed by lift-off technique.

Image of FIG. 2.
FIG. 2.

(a) Grazing-incident XRD pattern, acquired at room temperature, and field-emission SEM images of (b) cross-sectional view and (c) surface morphology for the deposited film.

Image of FIG. 3.
FIG. 3.

Gate voltage dependence of Raman scattering spectra, acquired at room temperature. Other experimental conditions are as follows: 1800 grating, confocal pinhole, exposure time of , only once accumulation, and maximum output laser power of . The laser heating effect is negligible.

Image of FIG. 4.
FIG. 4.

Gate voltage dependence of IR reflecting spectra, acquired at room temperature. is the cutoff wavelength of mercury cadmium tellurium (MCT) (HgCdTe) detector around (or ) to cause the reflections at longer wavelengths inaccurate, and is normalized reflectance against the background of standard silver mirror reflection.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate-field-induced phase transitions in VO2: Monoclinic metal phase separation and switchable infrared reflections