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(a) MOS device in configuration. As shown is the (100) substrate, the gate oxide, and the with top Ohmic metal contact. In addition, another Ohmic contact is formed to the back of the substrate. (b) Opened optical windows in the top metals, in each area of and spaced by , are formed by lift-off technique.
(a) Grazing-incident XRD pattern, acquired at room temperature, and field-emission SEM images of (b) cross-sectional view and (c) surface morphology for the deposited film.
Gate voltage dependence of Raman scattering spectra, acquired at room temperature. Other experimental conditions are as follows: 1800 grating, confocal pinhole, exposure time of , only once accumulation, and maximum output laser power of . The laser heating effect is negligible.
Gate voltage dependence of IR reflecting spectra, acquired at room temperature. is the cutoff wavelength of mercury cadmium tellurium (MCT) (HgCdTe) detector around (or ) to cause the reflections at longer wavelengths inaccurate, and is normalized reflectance against the background of standard silver mirror reflection.
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