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In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy
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10.1063/1.3009570
/content/aip/journal/apl/93/17/10.1063/1.3009570
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3009570
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RAS of a single-domain surface (spectrum D), the corresponding surface that was intentionally prepared as two-domain surface (spectrum S), and its eightfold amplification (spectrum A).

Image of FIG. 2.
FIG. 2.

Comparison of the RA spectra of sample D and of a homoepitaxially prepared GaP(100) reference R.

Image of FIG. 3.
FIG. 3.

AFM of Si(100) before [(a) and (b)] and after growth [(c) and (d)]. In contrast to sample D (d), the surface of sample S (c) exhibits a network of antiphase boundaries after growth. In the two different surface domain types of sample S (c) are color coded in black and white to quantify the surface area covered by each phase.

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/content/aip/journal/apl/93/17/10.1063/1.3009570
2008-10-31
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3009570
10.1063/1.3009570
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