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Thermal stability of amorphous silicon/silicon nitride stacks for passivating crystalline silicon solar cells
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10.1063/1.3009571
/content/aip/journal/apl/93/17/10.1063/1.3009571
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3009571
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Figures

Image of FIG. 1.
FIG. 1.

Effective surface recombination velocity at of low-resistivity boron-doped FZ-Si wafers passivated by as a function of annealing time at . The thick layer is capped by a thick layer. The thermal stability of samples with is significantly better than that of samples with . The lines are guides for the eye.

Image of FIG. 2.
FIG. 2.

Emitter saturation current density of -samples passivated by as a function of annealing time at . The capping layers (, ) are deposited at 300 or , respectively. A nonpassivated sample acts as reference. The passivation is more stable against thermal degradation with than with . The lines are guides for the eye.

Image of FIG. 3.
FIG. 3.

Simulated emitter saturation current density of -samples as a function of the surface recombination parameter which is a measure for the quality of the surface passivation. The dopant profile measured by electrochemical capacitance-voltage profiling is shown in the inset. The obtained corresponds to the surface parameter .

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/content/aip/journal/apl/93/17/10.1063/1.3009571
2008-10-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal stability of amorphous silicon/silicon nitride stacks for passivating crystalline silicon solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3009571
10.1063/1.3009571
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