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Photovoltaic effect in micrometer-thick perovskite-type oxide multilayers on Si substrates
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10.1063/1.3010373
/content/aip/journal/apl/93/17/10.1063/1.3010373
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3010373
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM images of (a) ML, (c) columnar structures, (d) LSMO/Si interface, and (e) SNTO/LSMO interface. EDS analysis at selected points in (a) is shown in (b). The dashed lines denote the interface positions.

Image of FIG. 2.
FIG. 2.

The current-voltage characteristic of the ML on Si (100) substrate under illumination (open square points) and in the dark (circle solid points) at room temperatures.

Image of FIG. 3.
FIG. 3.

(a) Open-circuit photovoltaic sensitivity and (b) photocurrent respectivity of the ML on Si (100) substrate.

Image of FIG. 4.
FIG. 4.

Temporal response of the MLs on Si (100) substrates under the illumination of Nd:YAG pulsed laser at room temperature without an applied bias. The inset shows the peak photovoltaic sensitivity as a function of pulse energy density.

Image of FIG. 5.
FIG. 5.

The schematic band structure of the MLs on Si (100) substrates under the illuminations of (a) light with wavelengths above and (b) ultraviolet light. , and denoted the conduction band level, Fermi level, and valence band level, respectively.

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/content/aip/journal/apl/93/17/10.1063/1.3010373
2008-10-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photovoltaic effect in micrometer-thick perovskite-type oxide multilayers on Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3010373
10.1063/1.3010373
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