Full text loading...
Cross-sectional TEM images of (a) ML, (c) columnar structures, (d) LSMO/Si interface, and (e) SNTO/LSMO interface. EDS analysis at selected points in (a) is shown in (b). The dashed lines denote the interface positions.
The current-voltage characteristic of the ML on Si (100) substrate under illumination (open square points) and in the dark (circle solid points) at room temperatures.
(a) Open-circuit photovoltaic sensitivity and (b) photocurrent respectivity of the ML on Si (100) substrate.
Temporal response of the MLs on Si (100) substrates under the illumination of Nd:YAG pulsed laser at room temperature without an applied bias. The inset shows the peak photovoltaic sensitivity as a function of pulse energy density.
The schematic band structure of the MLs on Si (100) substrates under the illuminations of (a) light with wavelengths above and (b) ultraviolet light. , and denoted the conduction band level, Fermi level, and valence band level, respectively.
Article metrics loading...