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Resistance switching properties of sol-gel derived thin films on F-doped conducting glass
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10.1063/1.3011029
/content/aip/journal/apl/93/17/10.1063/1.3011029
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3011029
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the measurement system. (b) XRD spectra of the LCMO thin films on FTO conducting glass.

Image of FIG. 2.
FIG. 2.

(a) Current-voltage characteristics collected at the ambient temperature. Arrows indicate the direction for the scan. The left-hand inset presents current-voltage characteristics measurement for 100 subsequent cycles with 0.5 V/s scanning rate, and the right-hand inset indicates the differential resistance . (b) XPS survey spectra of the LCMO thin films. The inset shows the XPS characteristics of for LCMO films.

Image of FIG. 3.
FIG. 3.

Current-voltage characteristics of (a) vs , (b) vs , and (c) double-logarithmic plot, indicating the conduction mechanism for Au/LCMO/FTO heterostructures. The values of different slopes are listed in the plots of (c).

Image of FIG. 4.
FIG. 4.

Retention characteristic of the device. Inset shows typical results of multilevel switching behaviors and endurance of Au/LCMO/FTO heterostructures.

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/content/aip/journal/apl/93/17/10.1063/1.3011029
2008-10-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistance switching properties of sol-gel derived La0.67Ca0.33MnO3 thin films on F-doped SnO2 conducting glass
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3011029
10.1063/1.3011029
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