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(a) Schematic of the measurement system. (b) XRD spectra of the LCMO thin films on FTO conducting glass.
(a) Current-voltage characteristics collected at the ambient temperature. Arrows indicate the direction for the scan. The left-hand inset presents current-voltage characteristics measurement for 100 subsequent cycles with 0.5 V/s scanning rate, and the right-hand inset indicates the differential resistance . (b) XPS survey spectra of the LCMO thin films. The inset shows the XPS characteristics of for LCMO films.
Current-voltage characteristics of (a) vs , (b) vs , and (c) double-logarithmic plot, indicating the conduction mechanism for Au/LCMO/FTO heterostructures. The values of different slopes are listed in the plots of (c).
Retention characteristic of the device. Inset shows typical results of multilevel switching behaviors and endurance of Au/LCMO/FTO heterostructures.
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