Full text loading...
(a) Pulse switching results (reset: by injecting square shaped voltage pulse, set: current sweep) and (b) static curve as set operation of (a) (inset: schematic of storage node contact test cell).
(a) Resistivity change and (b) x-ray diffraction patterns of GST films as a function of the annealing temperature for the same annealing time (20 s).
(a) The variation in the absorption spectra with the amorphization of the GST films and (b) the variation in and with the amorphization of the GST films.
Article metrics loading...