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Dependency of threshold switching on density of localized states of thin films for phase change random access memory
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10.1063/1.3012366
/content/aip/journal/apl/93/17/10.1063/1.3012366
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012366
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Pulse switching results (reset: by injecting square shaped voltage pulse, set: current sweep) and (b) static curve as set operation of (a) (inset: schematic of storage node contact test cell).

Image of FIG. 2.
FIG. 2.

(a) Resistivity change and (b) x-ray diffraction patterns of GST films as a function of the annealing temperature for the same annealing time (20 s).

Image of FIG. 3.
FIG. 3.

(a) The variation in the absorption spectra with the amorphization of the GST films and (b) the variation in and with the amorphization of the GST films.

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/content/aip/journal/apl/93/17/10.1063/1.3012366
2008-10-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependency of threshold switching on density of localized states of Ge2Sb2Te5 thin films for phase change random access memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012366
10.1063/1.3012366
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