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The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices
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10.1063/1.3012381
/content/aip/journal/apl/93/17/10.1063/1.3012381
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012381
/content/aip/journal/apl/93/17/10.1063/1.3012381
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/content/aip/journal/apl/93/17/10.1063/1.3012381
2008-10-31
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012381
10.1063/1.3012381
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