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The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices
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10.1063/1.3012381
/content/aip/journal/apl/93/17/10.1063/1.3012381
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012381
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics of the MANOS samples after RTA or laser annealing (LA). The inset shows EOT and LA energy and XPS results of (b) RTA and (c) LA samples.

Image of FIG. 2.
FIG. 2.

(a) XPS, (b) HR-XTEM, and (c) analysis data following RTA or LA.

Image of FIG. 3.
FIG. 3.

(a) Leakage current density versus electrical field and (b) cumulative probability versus electrical field at .

Image of FIG. 4.
FIG. 4.

Retention properties at under a positive stress voltage on the gate electrode. The inset diagram shows the charge loss mechanism of MANOS device.

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/content/aip/journal/apl/93/17/10.1063/1.3012381
2008-10-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012381
10.1063/1.3012381
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