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Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
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10.1063/1.3012386
/content/aip/journal/apl/93/17/10.1063/1.3012386
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012386
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic cross-sectional view of the transparent GIZO TFT NV memory structure. (b) STEM image (left side) and EDS element analysis (right side) of the stack of in the device channel center, where the inset image of diffraction pattern by TEM for GIZO channel is included.

Image of FIG. 2.
FIG. 2.

The optical transmittance characteristics of IZO and GIZO/IZO on the glass substrate with buffer layer, where the inset photo image of transparent GIZO TFT NV memory sample is included.

Image of FIG. 3.
FIG. 3.

(a) Program curves and (b) F-N tunneling program/erase mechanics for transparent GIZO TFT NV memory with the sandwich gate insulators structure of . Program curves of GIZO TFTs using (c) and (d) single layers as the gate insulator.

Image of FIG. 4.
FIG. 4.

(a) Erase curves and (b) retention characteristics of transparent GIZO TFT NV memory after one-time program.

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/content/aip/journal/apl/93/17/10.1063/1.3012386
2008-10-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012386
10.1063/1.3012386
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