1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
Rent:
Rent this article for
USD
10.1063/1.3012386
/content/aip/journal/apl/93/17/10.1063/1.3012386
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012386
/content/aip/journal/apl/93/17/10.1063/1.3012386
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/93/17/10.1063/1.3012386
2008-10-30
2014-07-29
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012386
10.1063/1.3012386
SEARCH_EXPAND_ITEM