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Spatially resolved electronic properties of MgO/GaAs(001) tunnel barrier studied by ballistic electron emission microscopy
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10.1063/1.3012571
/content/aip/journal/apl/93/17/10.1063/1.3012571
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012571
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Figures

Image of FIG. 1.
FIG. 1.

(a) Left: typical STM image of a 13 nm thick Au film grown on a 3.9 nm MgO/GaAs(001) tunnel contact (color scale: 0 to 3.1 nm). (b) Right: corresponding BEEM image recorded with . The tip voltage has been varied from (top and bottom part of the image) to in the middle image region (color scale: 0 to 30 pA).

Image of FIG. 2.
FIG. 2.

Typical vs spectra obtained by the average of 200 individual BEES spectra: (a) left: on a junction area with defect states present in the upper part of the MgO band-gap, and (b) right: on a defect-free junction area. STM feedback loop was kept on during measurement, so as to keep a constant (30 nA) value during spectroscopy.

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/content/aip/journal/apl/93/17/10.1063/1.3012571
2008-10-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spatially resolved electronic properties of MgO/GaAs(001) tunnel barrier studied by ballistic electron emission microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3012571
10.1063/1.3012571
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