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Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy
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10.1063/1.3013352
/content/aip/journal/apl/93/17/10.1063/1.3013352
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3013352
/content/aip/journal/apl/93/17/10.1063/1.3013352
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/content/aip/journal/apl/93/17/10.1063/1.3013352
2008-10-31
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3013352
10.1063/1.3013352
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