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Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy
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10.1063/1.3013352
/content/aip/journal/apl/93/17/10.1063/1.3013352
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3013352
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Variation in the (a) hole carrier concentration and (b) resistivity of GaN:Mg layers with misorientation angle of GaN substrate with respect to polar -plane. Results for two series of samples are shown. For comparison results for GaN:Mg layers grown on sapphire substrate and on -plane GaN nonpolar substrate are included in the figure.

Image of FIG. 2.
FIG. 2.

Resistivity of differently misoriented GaN:Mg samples (Series A) as a function of inverse temperature.

Image of FIG. 3.
FIG. 3.

PL intensity vs energy of differently misoriented GaN:Mg samples (Series A).

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/content/aip/journal/apl/93/17/10.1063/1.3013352
2008-10-31
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3013352
10.1063/1.3013352
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