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An ultrathin Zr(Ge) alloy film as an exhaustion interlayer combined with Cu(Zr) seed layer for the Cu/porous SiOC:H dielectric integration
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10.1063/1.3013565
/content/aip/journal/apl/93/17/10.1063/1.3013565
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3013565
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Sheet resistance values of groups A, B1, and B2 as a function of annealing temperature (annealed for 2 h).

Image of FIG. 2.
FIG. 2.

Cross-sectional HRTEM image of the sample of group A (as-deposited).

Image of FIG. 3.
FIG. 3.

Cross-section TEM view of the sample of group A (annealed at for 2 h): (a) bright-field, (b) high-resolution image of remarked zone in (a), (c) the electron image of the zone with EDS mapping scan, (d) EDS mapping images of Zr, Si, Cu, and Ge, and (e) EDS depth profile of Cu/Cu(Zr)/Zr(Ge)/-SiOC:H film stack.

Image of FIG. 4.
FIG. 4.

Cross-sectional TEM view of the sample of group B2 (a) as-deposited state, (b) annealed state (for 2 h), with (c) an EDS depth profile of the Cu/Cu(Zr)/-SiOC:H layer stack and (d) electron image of EDS line scan.

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/content/aip/journal/apl/93/17/10.1063/1.3013565
2008-10-31
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An ultrathin Zr(Ge) alloy film as an exhaustion interlayer combined with Cu(Zr) seed layer for the Cu/porous SiOC:H dielectric integration
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3013565
10.1063/1.3013565
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