Full text loading...
Sheet resistance values of groups A, B1, and B2 as a function of annealing temperature (annealed for 2 h).
Cross-sectional HRTEM image of the sample of group A (as-deposited).
Cross-section TEM view of the sample of group A (annealed at for 2 h): (a) bright-field, (b) high-resolution image of remarked zone in (a), (c) the electron image of the zone with EDS mapping scan, (d) EDS mapping images of Zr, Si, Cu, and Ge, and (e) EDS depth profile of Cu/Cu(Zr)/Zr(Ge)/-SiOC:H film stack.
Cross-sectional TEM view of the sample of group B2 (a) as-deposited state, (b) annealed state (for 2 h), with (c) an EDS depth profile of the Cu/Cu(Zr)/-SiOC:H layer stack and (d) electron image of EDS line scan.
Article metrics loading...