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High-performance millimeter-wave superlattice electronic devices
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10.1063/1.3010758
/content/aip/journal/apl/93/18/10.1063/1.3010758
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/18/10.1063/1.3010758
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical room-temperature characteristic of a mesa-type GaAs/AlAs SLED from wafer 1 on an integral heat sink.

Image of FIG. 2.
FIG. 2.

(a) RF output power levels and (b) corresponding dc-to-RF conversion efficiencies (in percent) of GaAs/AlAs SLEDs on integral heat sinks operating in the fundamental mode around 65 GHz. ◼: wafer 1, ◻: wafer 2.

Image of FIG. 3.
FIG. 3.

Spectrum of a free-running oscillator with a SLED from wafer 1 in the fundamental mode, RF power: 20 mW, center frequency: 64.35 GHz, vertical scale: 10 dB/div., horizontal scale: 500 kHz/div., resolution bandwidth: 100 kHz, and video bandwidth: 5 kHz.

Image of FIG. 4.
FIG. 4.

Spectrum of a free-running oscillator with a SLED from wafer 1 in a second-harmonic mode, RF power: 14 mW, center frequency: 132.64 GHz, vertical scale: 10 dB/div., horizontal scale: 2 MHz/div., resolution bandwidth: 200 kHz, and video bandwidth: 10 kHz.

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/content/aip/journal/apl/93/18/10.1063/1.3010758
2008-11-05
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance millimeter-wave superlattice electronic devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/18/10.1063/1.3010758
10.1063/1.3010758
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