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Flexible pentacene ion sensitive field effect transistor with a hydrogenated silicon nitride surface treated Parylene top gate insulator
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FIG. 1.

Schematic structure of the device.

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FIG. 2.

Output characteristics recorded in a solution with .

Image of FIG. 3.

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FIG. 3.

(a) Output characteristics recorded in solutions with , 7, and 10 at a reference electrode voltage and (b) transfer characteristics at the same with a drain voltage .

Image of FIG. 4.

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FIG. 4.

Time-dependent sensor response for successive solutions with different values: (a) recovery of initial response for , then 10, then 4 again; (b) evolution of the response for decreasing of the solution. Data recorded for .

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/content/aip/journal/apl/93/18/10.1063/1.3013578
2008-11-07
2014-04-18

Abstract

We report on the realization of flexible ion sensitive organic field effect transistors based on pentacene on which Parylene-C was deposited as top gate dielectric. In order to create proton sensitive sites at the insulator/electrolyte interface, Parylene-C surface has been covered with a thin layer of hydrogenated silicon nitride (SiN:H) deposited by photochemical vapor deposition at moderate temperature. The combination of Parylene and SiN:H enables the realization of highly reproducible and good performance transistors as well as ion sensitive sensors with an excellent response both in the acidic and alkaline range in a nearly all plastic technology.

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Scitation: Flexible pentacene ion sensitive field effect transistor with a hydrogenated silicon nitride surface treated Parylene top gate insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/18/10.1063/1.3013578
10.1063/1.3013578
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