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Flexible pentacene ion sensitive field effect transistor with a hydrogenated silicon nitride surface treated Parylene top gate insulator
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2008-11-07
2015-05-03

Abstract

We report on the realization of flexible ion sensitive organic field effect transistors based on pentacene on which Parylene-C was deposited as top gate dielectric. In order to create proton sensitive sites at the insulator/electrolyte interface, Parylene-C surface has been covered with a thin layer of hydrogenated silicon nitride (SiN:H) deposited by photochemical vapor deposition at moderate temperature. The combination of Parylene and SiN:H enables the realization of highly reproducible and good performance transistors as well as ion sensitive sensors with an excellent response both in the acidic and alkaline range in a nearly all plastic technology.

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Scitation: Flexible pentacene ion sensitive field effect transistor with a hydrogenated silicon nitride surface treated Parylene top gate insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/18/10.1063/1.3013578
10.1063/1.3013578
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