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Quantitative dopant profiling of laser annealed focused ion beam-prepared silicon junctions with nanometer-scale resolution
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) shows a SEM image of a TEM specimen prepared conventionally in the FIB. The position of the junction in indicated by the dashed line and the principle paths for the electron-hole pairs and secondary electrons to be conducted away from the region of interest are indicated by the arrows. For some of the membranes located in the central positions, the -type surface layer is electrically isolated due to the effect of the junction. The surface of the specimen has been coated with tens of nanometers of Pt which is indicated by the shaded region. (b) shows a magnified SEM image of an electrically connected membrane clearly indicating the position of the protective tungsten layer, the sputtered platinum, the -type layer, -type layer, and the -doped substrate.

Image of FIG. 2.
FIG. 2.

(a) and (b) show phase images of a -thick specimen containing a junction before and after a laser anneal.

Image of FIG. 3.
FIG. 3.

(a) and (b) show the step in phase measured across the junctions as a function of crystalline specimen thickness measured using CBED before and after a 245 and laser anneal respectively. (c) shows phase profiles measured across a -thick electrically isolated membrane indicated as M1 in (b) before and after laser annealing using a power of . (d) shows a -thick electrically “connected” membrane which is indicated as M2 in (b) both before and after a laser anneal using a power of .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative dopant profiling of laser annealed focused ion beam-prepared silicon p-n junctions with nanometer-scale resolution