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Quantitative dopant profiling of laser annealed focused ion beam-prepared silicon junctions with nanometer-scale resolution
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10.1063/1.3013834
/content/aip/journal/apl/93/18/10.1063/1.3013834
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/18/10.1063/1.3013834
/content/aip/journal/apl/93/18/10.1063/1.3013834
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/content/aip/journal/apl/93/18/10.1063/1.3013834
2008-11-04
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative dopant profiling of laser annealed focused ion beam-prepared silicon p-n junctions with nanometer-scale resolution
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/18/10.1063/1.3013834
10.1063/1.3013834
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