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Low density InAs quantum dots with control in energy emission and top surface location
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10.1063/1.3021070
/content/aip/journal/apl/93/18/10.1063/1.3021070
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/18/10.1063/1.3021070
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM micrograph showing a GaAs nanoholes template performed by droplet epitaxy technique. The inset shows a detailed three-dimensional image of a nanohole. (b) Nanohole template diameter distribution. (c) Nanohole template depth distribution.

Image of FIG. 2.
FIG. 2.

(a) AFM micrograph showing the nanoholes template after growing 1.3 ML of InAs. (b) AFM micrograph showing the nanoholes template after growing 1.7 ML of InAs. (c) PL spectra after growing 1.1, 1.3, 1.5, and 1.7 ML of InAs on the nanoholes template. (d) AFM profiles showing the filling of the GaAs nanohole from the initial empty state to the nucleation of 1.1, 1.3, 1.5, and 1.7 ML of InAs.

Image of FIG. 3.
FIG. 3.

(a) derivative AFM micrograph showing the surface after capping the InAs nanostructures with a 25 nm thick GaAs buffer layer. The inset shows a detailed zoom of this image. (b) derivative AFM micrograph showing the surface in (a) after the growth of 1.4 ML of InAs. The inset shows a detailed zoom of this image. White circles surround the InAs nucleus formed on top of the mounds.

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/content/aip/journal/apl/93/18/10.1063/1.3021070
2008-11-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low density InAs quantum dots with control in energy emission and top surface location
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/18/10.1063/1.3021070
10.1063/1.3021070
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