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Characteristics of gate dielectrics partially fluorinated by a low energy fluorine beam
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10.1063/1.2975183
/content/aip/journal/apl/93/19/10.1063/1.2975183
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.2975183
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS depth profiles of AlO, F, O, N, and SiN in ONA stacks with/without the low energy fluorine beam treatment.

Image of FIG. 2.
FIG. 2.

Al XPS narrow scan spectra of (a) untreated ONA stack, (b) ONA stack after the fluorine beam treatment, and (c) after 90 s sputtering of (b) sample.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of the ONA stack samples. (a) untreated ONA stack and (b) the ONA stack after the fluorine beam treatment.

Image of FIG. 4.
FIG. 4.

hysteresis curves of the MOS devices fabricated with the ONA stacks with/without the fluorine beam treatment.

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/content/aip/journal/apl/93/19/10.1063/1.2975183
2008-11-14
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.2975183
10.1063/1.2975183
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