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SIMS depth profiles of AlO, F, O, N, and SiN in ONA stacks with/without the low energy fluorine beam treatment.
Al XPS narrow scan spectra of (a) untreated ONA stack, (b) ONA stack after the fluorine beam treatment, and (c) after 90 s sputtering of (b) sample.
Cross-sectional TEM images of the ONA stack samples. (a) untreated ONA stack and (b) the ONA stack after the fluorine beam treatment.
hysteresis curves of the MOS devices fabricated with the ONA stacks with/without the fluorine beam treatment.
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