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Interfacial reaction of atomic-layer-deposited film as a function of the surface state of an (100) substrate
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Image of FIG. 1.
FIG. 1.

The XPS spectra of BOE-treated GaAs(left side) and oxidized GaAs (right side): the upper line is As and the lower line is Ga 3d. XPS spectra were also obtained for the film grown on the surfaces. In As spectra, As–Ga, , and boding states corresponded to binding energies at 41.4, 44.3, and , respectively. In Ga spectra, , , and bonding states corresponded to binding energies at 20.0, 20.4, and , respectively. A Hf peak due to Hf–O bonding was observed at a binding energy of , slightly overlapping the As peaks.

Image of FIG. 2.
FIG. 2.

HRTEM images of films grown on BOE-treated GaAs (left side) and oxidized GaAs (right side). The images of the films annealed at were also obtained.

Image of FIG. 3.
FIG. 3.

Valence band data of films. The Fermi energy did not change with annealing temperatures up to . The VBO on BOE-treated surface was not changed, while it on oxidized surface increased as the annealing temperature increased.


Generic image for table
Table I.

Changes in the normalized intensities in several kinds of arsenic and gallium oxides for with S1 and S2 The peaks of As and Ga were normalized with the As substrate peak and the Hf peak, respectively. , , , and boding states corresponded to , AsO, , and , respectively. , , and corresponded to , GaO(H), , and , respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate