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The procedure of the air-voids formation between GaN and a patterned sapphire substrate.
(a) Microscope image of the front surface and (b) SEM image of the cross section of the wafer after 15 s etching in and mixed chemical. (c) SEM image of the cross section of the wafer after the regrowth of LED structure.
(a) The schematic structure of the AVE-LED. (b) Optical power of FS-LED, PS-LED, and AVE-LED as injection current.
Ray tracing result of the (a) PS-LED and (b) AVE-LED. (c) LEEs of each face (top, four-sides, and bottom) of PS-LED and AVE-LED.
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