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Air-voids embedded high efficiency InGaN-light emitting diode
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10.1063/1.2998596
/content/aip/journal/apl/93/19/10.1063/1.2998596
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.2998596
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The procedure of the air-voids formation between GaN and a patterned sapphire substrate.

Image of FIG. 2.
FIG. 2.

(a) Microscope image of the front surface and (b) SEM image of the cross section of the wafer after 15 s etching in and mixed chemical. (c) SEM image of the cross section of the wafer after the regrowth of LED structure.

Image of FIG. 3.
FIG. 3.

(a) The schematic structure of the AVE-LED. (b) Optical power of FS-LED, PS-LED, and AVE-LED as injection current.

Image of FIG. 4.
FIG. 4.

Ray tracing result of the (a) PS-LED and (b) AVE-LED. (c) LEEs of each face (top, four-sides, and bottom) of PS-LED and AVE-LED.

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/content/aip/journal/apl/93/19/10.1063/1.2998596
2008-11-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Air-voids embedded high efficiency InGaN-light emitting diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.2998596
10.1063/1.2998596
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