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Electrical characteristics of metal-oxide-semiconductor capacitors on -GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric
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10.1063/1.3007978
/content/aip/journal/apl/93/19/10.1063/1.3007978
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3007978
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Figures

Image of FIG. 1.
FIG. 1.

characteristics of MOS capacitors on GaAs with 4 nm thick (a) , (b) (1:1)-HfAlO, (c) (2:2)-HfAlO, and (d) (3:3)-HfAlO gate dielectrics with an optimum postdeposition anneal leading to minimum frequency dispersion. The gate area of the MOS capacitor is .

Image of FIG. 2.
FIG. 2.

EOT and gate leakage current density at for MOS capacitors on GaAs with 4 nm of (1:1)-HfAlO and (3:3)-HfAlO gate dielectrics as a function of PDA temperature and time.

Image of FIG. 3.
FIG. 3.

Frequency dispersion characteristics and hysteresis voltage of MOS capacitors with 4 nm thick (i) (1:1)-HfAlO and (ii) (3:3)-HfAlO according to PDA temperature and time. Hysteresis was measured at the flatband condition at 1 MHz frequency by sweeping the gate voltage between and .

Image of FIG. 4.
FIG. 4.

spectra of (a) and (b) (3:3)-HfAlO/GaAs after PDA at for 1 min using three different take-off angles of (i) , (ii) , and (iii) . Inset shows spectra at take-off angle for (1:1)-HfAlO/GaAs.

Image of FIG. 5.
FIG. 5.

spectra of (a) and (b) (3:3)-HfAlO/GaAs after PDA at for 1 min using three different take-off angles of (i) , (ii) , and (iii) . The inset shows spectra at take-off angle for (1:1)-HfAlO/GaAs.

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/content/aip/journal/apl/93/19/10.1063/1.3007978
2008-11-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3007978
10.1063/1.3007978
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