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Potential profile of the step QW of 5789 with no applied bias voltage. Also shown are the moduli squared of the bound states in the step QW as well as two mostly barrier confined states. The dotted line indicates the Fermi energy. The samples 5789 and 5791 differ by the spacer layer thickness and 8.3 nm, respectively, between the -doping layer and the InGaAs QW layer. The dashed line represents the intermixed conduction band potential with the diffusion length .
(a) Absorption spectra measured at room-temperature with no applied bias for the samples 5789 (solid) and 5791 (dashed). Absorption peaks due to the and IS transitions are visible. Inset: schematic multipass characterization geometry. (b) Absorption spectra measured in 5789 for different applied voltages at . Clear Stark shifts of the and IS resonances are observed. Indicated for each spectrum is the applied voltage and within parentheses the voltage over the MQW .
Stark shift of the IS absorption peak position vs the voltage applied over the MQW. The symbols indicate experimental IS peak positions in the samples 5789 (circles) and 5791 (squares). The calculated IS resonance energies with sharp and intermixed interfaces are indicated by solid and dashed lines, respectively.
Layer structure and optical mode intensity profile of a SP-based modulator.
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