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High-speed operation of GaN/AlGaN quantum cascade detectors at
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10.1063/1.3021376
/content/aip/journal/apl/93/19/10.1063/1.3021376
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3021376

Figures

Image of FIG. 1.
FIG. 1.

Room-temperature absorption spectrum for one pass through the active region (circles) and photovoltage spectrum (squares). The dotted curves are Lorentzian fits of the absorption for 5, 6, and 7 ML wells. The inset shows the conduction band profile, energy levels, and squared envelope functions of one period of the QCD structure with 6 ML thick GaN wells calculated using an eight-band model.

Image of FIG. 2.
FIG. 2.

Normalized electrical response in dB at room temperature of the QCD vs modulation frequency for and mesas. The full (dotted) curves are the measurements (simulations). The top inset shows the equivalent electrical circuit. The bottom inset is a scanning electron microscope image of one mesa detector.

Tables

Generic image for table
Table I.

Equivalent electrical circuit parameters of the QCD deduced from S-parameter analysis. is the device capacitance, is the access resistance, is the parasitic capacitance, is the parasitic inductance, and is the load resistance. The standard deviations are 10 fF and for and , respectively.

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/content/aip/journal/apl/93/19/10.1063/1.3021376
2008-11-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3021376
10.1063/1.3021376
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