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Room-temperature absorption spectrum for one pass through the active region (circles) and photovoltage spectrum (squares). The dotted curves are Lorentzian fits of the absorption for 5, 6, and 7 ML wells. The inset shows the conduction band profile, energy levels, and squared envelope functions of one period of the QCD structure with 6 ML thick GaN wells calculated using an eight-band model.
Normalized electrical response in dB at room temperature of the QCD vs modulation frequency for and mesas. The full (dotted) curves are the measurements (simulations). The top inset shows the equivalent electrical circuit. The bottom inset is a scanning electron microscope image of one mesa detector.
Equivalent electrical circuit parameters of the QCD deduced from S-parameter analysis. is the device capacitance, is the access resistance, is the parasitic capacitance, is the parasitic inductance, and is the load resistance. The standard deviations are 10 fF and for and , respectively.
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