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Enhanced absorption by nanostructured silicon
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10.1063/1.3021480
/content/aip/journal/apl/93/19/10.1063/1.3021480
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3021480
View: Figures

Figures

FIG. 1.

Schematic of the freestanding membrane of silicon with period and thickness . is the angle between the incident wavevector and the -axis, and is the angle between the incident plane and the -axis. We denote TM polarization for and TE polarization for .

FIG. 2.

TM polarization. (a) Polar representation of the absorption factor for of a silicon grating with period , thickness , and filling factor . (b) Dispersion relation of the unperturbed waveguide mode and absorption factor in the plane , respectively, represented by yellow markers , and color scale from bright (0.5) to dark (0). (c) Amplitude of the , , , diffracted orders (normalized to the amplitude of the incoming 0 order) vs the incident angle for , . At this wavelength, only the 0 order is propagating.

FIG. 3.

TM polarization. (a) Polar representation of the absorption factor for of a silicon grating with period , thickness , and filling factor . (b) Absorption factor in the plane represented by linear color scale from bright (0.5) to dark (0).

FIG. 4.

Map of the real part of the magnetic field at the absorption resonance , , and . The dark line indicates the limit of the Si rod.

FIG. 5.

Wavelength of the absorption resonance vs the thickness of the Si membrane. The angle of the absorption resonance (not shown) is always around .

/content/aip/journal/apl/93/19/10.1063/1.3021480
2008-11-10
2014-04-25

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