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Thickness dependence of photoluminescence for tensely strained silicon layer on insulator
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10.1063/1.3023058
/content/aip/journal/apl/93/19/10.1063/1.3023058
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3023058
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM picture showing (a) the 15 nm and (b) the 9 nm thick strained Si layers.

Image of FIG. 2.
FIG. 2.

Raman spectra of strained Si layers with different thicknesses (9, 15, 40, 70, and 100 nm) as well as bulk Si under UV resonant excitation (363 nm).

Image of FIG. 3.
FIG. 3.

LTPL spectra of sSOI samples with different sSi layer thicknesses (9, 15, 40, 70, and 100 nm) under UV excitation (363 nm).

Image of FIG. 4.
FIG. 4.

Comparison of experimental strained Si optical band gap with the quantum confinement theoretical calculation. The inset describes the band diagram used for the calculation.

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/content/aip/journal/apl/93/19/10.1063/1.3023058
2008-11-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thickness dependence of photoluminescence for tensely strained silicon layer on insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3023058
10.1063/1.3023058
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