Full text loading...
Cross-sectional TEM picture showing (a) the 15 nm and (b) the 9 nm thick strained Si layers.
Raman spectra of strained Si layers with different thicknesses (9, 15, 40, 70, and 100 nm) as well as bulk Si under UV resonant excitation (363 nm).
LTPL spectra of sSOI samples with different sSi layer thicknesses (9, 15, 40, 70, and 100 nm) under UV excitation (363 nm).
Comparison of experimental strained Si optical band gap with the quantum confinement theoretical calculation. The inset describes the band diagram used for the calculation.
Article metrics loading...