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Ab initio study of electron-phonon coupling in boron-doped SiC
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View: Figures


Image of FIG. 1.
FIG. 1.

(Left panel) Valence band structure along high symmetry directions of the zinc-blende Brillouin zone for undoped silicon carbide (dotted red lines) and doped SiC:B (solid black lines) in the supercell. The horizontal line is the position of the Fermi level in the doped case. The two band structures have been aligned at the top of the valence bands. (Right panel) Total DOS (black line), B-states (green line), Si-states (yellow line), and C-states (blue line). The DOS and the various chemical species contributions are in units of .

Image of FIG. 2.
FIG. 2.

(a) ph-DOS for undoped SiC. (b) Total and projected ph-DOS for B-doped SiC. Projection over B, B and its Si nearest neighbors, and C- and Si-states are shown as green, red, yellow, and blue curves, respectively. (c) Eliashberg function and integrated e-ph coupling constant . The Eliashberg function has been decomposed into a similar way as ph-DOS.

Image of FIG. 3.
FIG. 3.

Eliashberg spectral function and integrated e-ph coupling for B-doped (a) and (b) diamond.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ab initio study of electron-phonon coupling in boron-doped SiC