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(Left panel) Valence band structure along high symmetry directions of the zinc-blende Brillouin zone for undoped silicon carbide (dotted red lines) and doped SiC:B (solid black lines) in the supercell. The horizontal line is the position of the Fermi level in the doped case. The two band structures have been aligned at the top of the valence bands. (Right panel) Total DOS (black line), B-states (green line), Si-states (yellow line), and C-states (blue line). The DOS and the various chemical species contributions are in units of .
(a) ph-DOS for undoped SiC. (b) Total and projected ph-DOS for B-doped SiC. Projection over B, B and its Si nearest neighbors, and C- and Si-states are shown as green, red, yellow, and blue curves, respectively. (c) Eliashberg function and integrated e-ph coupling constant . The Eliashberg function has been decomposed into a similar way as ph-DOS.
Eliashberg spectral function and integrated e-ph coupling for B-doped (a) and (b) diamond.
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