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Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial thin films on
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10.1063/1.3025301
/content/aip/journal/apl/93/19/10.1063/1.3025301
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3025301
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Comparison of room temperature XRD scan of bulk ceramic to thin films KNN-LT-LS grown at various oxygen partial pressures , showing no secondary phases in the films.

Image of FIG. 2.
FIG. 2.

Variation of dielectric constant with oxygen partial pressure during thin film deposition at and room temperature.

Image of FIG. 3.
FIG. 3.

Comparison of room temperature hysteresis loops of KNN-LT-LS thin films, at various background oxygen pressures, showing the improvement in remnant and saturated polarization.

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/content/aip/journal/apl/93/19/10.1063/1.3025301
2008-11-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrTiO3
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3025301
10.1063/1.3025301
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