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Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

TOFSIMS images of structures: (a) silicon ion signal on the top aluminum electrode; (b) 3D view of silicon diffusing through the oxide and aluminum layers; (c) interface after sputtering off Al; (d) 3D La-ion mapping of the layer; (e) Al-ion mapping of electrode top surface; (f) 3D Al-ion mapping of the device. The surface scan area is and the depth covers the thickness of the electrode ( Al or TiN) and the oxide . Note that the thickness is not in scale with the surface area.

Image of FIG. 2.
FIG. 2.

Typical profiles of Al, La, O, and Si TOFSIMS ion counts across structures.

Image of FIG. 3.
FIG. 3.

TOFSIMS Si-ion mapping images of structures showing very uniform layers and less silicon out-diffusion: (a) no silicon signal detected on the TiN electrode; (b) cross-section showing Si atoms accumulating at the interface; (c) no Si spikes visible from the substrate.

Image of FIG. 4.
FIG. 4.

Depth profile showing less silicon out-diffusion in the device.

Image of FIG. 5.
FIG. 5.

(a) characteristics of MIS capacitors with aluminum and TiN electrodes. Aluminum as the top electrode causes much higher leakage current. (b) Weibull distributions of the breakdown electric field of measured for both electrodes.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films