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Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces
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10.1063/1.3025852
/content/aip/journal/apl/93/19/10.1063/1.3025852
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3025852
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Figures

Image of FIG. 1.
FIG. 1.

(a) As and (b) Ga and In spectra for an InGaAs sample. Bottom: as-received sample; top: annealed at for . In (b), the dots are the experimental data and the solid lines are the numerical fitting results. The four individual components, from left to right, are Ga of gallium oxide, Ga of InGaAs, In of indium oxide, and In of InGaAs.

Image of FIG. 2.
FIG. 2.

(a) As and (b) Ga and In spectra for an InGaAs sample cleaned by 10% HCl solution. Bottom: right after the HCl cleaning. Top: annealed at for after the HCl cleaning. In (b), the dots are the experimental data and the solid lines are the numerical fitting results.

Image of FIG. 3.
FIG. 3.

(a) As , (b) Ga , and (c) Al spectra for InAlAs samples. In (a), dots are experimental data and solid lines are fitting results. In (c), from bottom to top: (i) as-received sample, (ii) annealed at for , (iii) cleaned with 10% HCl solution, (iv) annealed at for after 10% HCl cleaning, and (v) annealed at for after 10% HCl cleaning.

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/content/aip/journal/apl/93/19/10.1063/1.3025852
2008-11-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3025852
10.1063/1.3025852
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