Full text loading...
(a) InN mole fraction as a function of the substrate temperature for , , and . (b) Arrhenius plot of the InN losses normalized to values for those samples grown in the temperature range (In-droplets region). The activation energy for InN losses is .
The PA-MBE growth diagram for metal-face InAlN. Four different growth regimes are distinguished: In-droplets, intermediate In-rich, N-rich, and no In. The closed symbols define the conditions used for the InAlN layers grown in this study. The horizontal dotted line, labeled as , represents the value required to reach stoichiometry in terms of impinging fluxes.
InN mole fraction as a function on the impinging In flux at for and .
Representative surface morphologies of InAlN samples grown within the different growth regimes with and : (a) In-droplets (, ), (b) intermediate In-rich (, ), and (c) N rich (, ). (d) AFM image of a GaN sample grown under Ga-rich conditions near the thermodynamical limit for Ga-droplets formation.
Article metrics loading...