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A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
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10.1063/1.3026541
/content/aip/journal/apl/93/19/10.1063/1.3026541
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3026541
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) InN mole fraction as a function of the substrate temperature for , , and . (b) Arrhenius plot of the InN losses normalized to values for those samples grown in the temperature range (In-droplets region). The activation energy for InN losses is .

Image of FIG. 2.
FIG. 2.

The PA-MBE growth diagram for metal-face InAlN. Four different growth regimes are distinguished: In-droplets, intermediate In-rich, N-rich, and no In. The closed symbols define the conditions used for the InAlN layers grown in this study. The horizontal dotted line, labeled as , represents the value required to reach stoichiometry in terms of impinging fluxes.

Image of FIG. 3.
FIG. 3.

InN mole fraction as a function on the impinging In flux at for and .

Image of FIG. 4.
FIG. 4.

Representative surface morphologies of InAlN samples grown within the different growth regimes with and : (a) In-droplets (, ), (b) intermediate In-rich (, ), and (c) N rich (, ). (d) AFM image of a GaN sample grown under Ga-rich conditions near the thermodynamical limit for Ga-droplets formation.

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/content/aip/journal/apl/93/19/10.1063/1.3026541
2008-11-12
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3026541
10.1063/1.3026541
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