banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) InN mole fraction as a function of the substrate temperature for , , and . (b) Arrhenius plot of the InN losses normalized to values for those samples grown in the temperature range (In-droplets region). The activation energy for InN losses is .

Image of FIG. 2.
FIG. 2.

The PA-MBE growth diagram for metal-face InAlN. Four different growth regimes are distinguished: In-droplets, intermediate In-rich, N-rich, and no In. The closed symbols define the conditions used for the InAlN layers grown in this study. The horizontal dotted line, labeled as , represents the value required to reach stoichiometry in terms of impinging fluxes.

Image of FIG. 3.
FIG. 3.

InN mole fraction as a function on the impinging In flux at for and .

Image of FIG. 4.
FIG. 4.

Representative surface morphologies of InAlN samples grown within the different growth regimes with and : (a) In-droplets (, ), (b) intermediate In-rich (, ), and (c) N rich (, ). (d) AFM image of a GaN sample grown under Ga-rich conditions near the thermodynamical limit for Ga-droplets formation.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy