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-grown oxides/ (0001), , and interface properties characterized by using -type gate-controlled diodes
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10.1063/1.3028016
/content/aip/journal/apl/93/19/10.1063/1.3028016
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3028016
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Quasistatic curve obtained in -channel MOSFETs on the face by using a gate-controlled diode. A theoretical curve is also shown by a dashed line.

Image of FIG. 2.
FIG. 2.

characteristics of the fabricated MOSFETs on (a) (0001), (b) , and (c) faces. Open squares in (a), open circles in (b), and closed circles in (c) mean the characteristics experimentally obtained. Dashed line means the theoretical curve. The right vertical axis denotes the and the solid line represents the (onset of strong inversion).

Image of FIG. 3.
FIG. 3.

Distribution of interface state density on the (0001) face (open squares), face (open circles), and face (closed circles). The interface state density was estimated by curves measured by using the gate-controlled diode structure.

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/content/aip/journal/apl/93/19/10.1063/1.3028016
2008-11-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: N2O-grown oxides/4H-SiC (0001), (033¯8), and (112¯0) interface properties characterized by using p-type gate-controlled diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3028016
10.1063/1.3028016
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