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Evolution in surface morphology of epitaxial graphene layers on SiC induced by controlled structural strain
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10.1063/1.3028091
/content/aip/journal/apl/93/19/10.1063/1.3028091
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3028091
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Figures

Image of FIG. 1.
FIG. 1.

Electron channeling contrast images of 1 ML epitaxial graphene layers synthesized at different annealing times: (a) clean SiC surface (0 min); (b) 1 min; (c) 2 min; (d) 4 min; (e) 8 min; (f) 30 min. Scale bar: .

Image of FIG. 2.
FIG. 2.

The edge roughness (defined as the difference in the normalized average MS deviation of any graphitized terrace edge with that of the initial ungraphitized surface) and the Raman shift line (Ref. 8) are shown as function of annealing time. Several profiles of terrace edges are extracted from SEM images of samples prepared with the same annealing time and temperature. Each profile (black curve on the SEM image of a sample annealed for 8 min) is fit with a ninth order polynomial to obtain an edge base line. The normalized average MS deviation (and thus the edge roughness ) is extracted from the base line.

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/content/aip/journal/apl/93/19/10.1063/1.3028091
2008-11-14
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evolution in surface morphology of epitaxial graphene layers on SiC induced by controlled structural strain
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3028091
10.1063/1.3028091
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