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Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
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10.1063/1.3030876
/content/aip/journal/apl/93/19/10.1063/1.3030876
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3030876
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the GaN-based VCSEL. (b) Band diagram of the asymmetric coupled QWs. (c) Band gap variation and distribution of optical standing waves in the VCSEL active region.

Image of FIG. 2.
FIG. 2.

Normalized PL spectra of the asymmetric coupled QWs and conventional uniform QWs at room temperature. Inset: schematic potential profile for the asymmetric coupled QWs with consideration of the polarization effect.

Image of FIG. 3.
FIG. 3.

(a) The variation of emission spectrum with increase of the pumping energy. (b) Emission intensity as a function of the pumping energy at room temperature.

Image of FIG. 4.
FIG. 4.

Emission intensity vs pumping energy in a logarithmic scale. Solid symbols are experimental data, and the line is the theoretical fitting curve.

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/content/aip/journal/apl/93/19/10.1063/1.3030876
2008-11-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/19/10.1063/1.3030876
10.1063/1.3030876
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