1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electrical investigation of -defects in GaN using Kelvin probe and conductive atomic force microscopy
Rent:
Rent this article for
USD
10.1063/1.2953081
/content/aip/journal/apl/93/2/10.1063/1.2953081
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2953081
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Topography image of sample A (-doped top layer), (b) Kelvin voltage distribution of the same region at 0 V, and (c) current map of the same region measured with an applied voltage of . (d) Topography image of sample B (-doped top layer), (e) Kelvin voltage distribution of the same region at 0 V, and (f) current map of the same region measured with an applied voltage of .

Image of FIG. 2.
FIG. 2.

Line scan measurements of sample A at a single -defect. (a) Topography measurement, (b) Kelvin voltage distribution, (c) current distribution at , and (d) current distribution at .

Image of FIG. 3.
FIG. 3.

Line scan measurements of sample B for two different regions. (a) Topography measurement of a -defect, (b) Kelvin voltage distribution, and (c) current distribution at of the same -defect. (d) Topography measurement of a defect-free region, (e) Kelvin voltage distribution, and (f) current distribution at of the same region.

Image of FIG. 4.
FIG. 4.

Schematic band diagram of the interface between the AFM tip and the planar surface (left side) and between the AFM tip and the -defects (right side) of sample A. The Schottky barrier for the planar surface is and for the -defects . The dashed lines mark the difference in the vacuum levels of the planar surface and the -defects, .

Loading

Article metrics loading...

/content/aip/journal/apl/93/2/10.1063/1.2953081
2008-07-16
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical investigation of V-defects in GaN using Kelvin probe and conductive atomic force microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2953081
10.1063/1.2953081
SEARCH_EXPAND_ITEM