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Pseudomorphic layers synthesized by gas immersion laser doping
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10.1063/1.2956674
/content/aip/journal/apl/93/2/10.1063/1.2956674
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2956674

Figures

Image of FIG. 1.
FIG. 1.

Measured profiles of the laser fluence at (left scale) and of the resulting Ge content obtained from EDX (right scale). The melting threshold is indicated by a line. Inset shows a scanning electron microscopy image of the SiGe spot and the linescan used to get the Ge EDX profile.

Image of FIG. 2.
FIG. 2.

Rutherford backscattering spectra of SiGe layers obtained with a laser energy density for different number of pulses (left scale). The channeling spectrum for the 2000 pulse sample is shown (right scale) and shifted for clarity. The value is 4.5%.

Image of FIG. 3.
FIG. 3.

Evolution of the Ge amount, as deduced from the RBS spectra, vs the energy density and the number of laser pulses.

Image of FIG. 4.
FIG. 4.

Measured XRD (004) scans from SiGe layers obtained at for 250 to 4000 pulses (top), and related simulated spectra accounting for fully strained SiGe layers and the parabolic gradient deduced from the RBS measurements (bottom).

Tables

Generic image for table
Table I.

Characteristics of SiGe layers synthesized with 4000 laser pulses as deduced from RBS and XRD measurements. RBS channelling to random ratio value for cannot be determined due to the low thickness.

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/content/aip/journal/apl/93/2/10.1063/1.2956674
2008-07-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pseudomorphic SiGe∕Si(001) layers synthesized by gas immersion laser doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2956674
10.1063/1.2956674
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