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Room temperature Si -growth on Ge incorporating high- dielectric for metal oxide semiconductor applications
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10.1063/1.2957476
/content/aip/journal/apl/93/2/10.1063/1.2957476
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2957476
/content/aip/journal/apl/93/2/10.1063/1.2957476
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/content/aip/journal/apl/93/2/10.1063/1.2957476
2008-07-14
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature Si δ-growth on Ge incorporating high-K dielectric for metal oxide semiconductor applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2957476
10.1063/1.2957476
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