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Core level Si x-ray photoemission spectra of the ML sample, showing the Si–O peak at .
(a) Cross sectional TEM micrograph of the ML capacitor. (b) The high resolution TEM image shows the high- dielectric layer of thickness and the amorphous interlayer of .
(a) Multifrequency characteristics measured from the ML capacitor. No kinks for indicate the reduction in interface states near the conduction band edge. The inset captures the gate leakage current density of at . (b) Bidirectional characteristics of ML capacitor at . The inset shows the hysteresis of at the flatband capacitance.
Interface state analysis in the depletion regime. (a) vs gate bias and (b) vs frequency show frequency and potential dependency of the interface traps. (c) vs surface energy of the interface states , showing to be near the midgap. (d) vs surface energy of the interface states is linear whereby the mean capture cross section of the holes can be estimated to be .
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