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Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films
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10.1063/1.2957654
/content/aip/journal/apl/93/2/10.1063/1.2957654
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2957654

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD patterns of AlN films prepared at different oxygen concentrations in sputtering gas. (b) Dependence of FWHM of (0002)AlN x-ray rocking curves on oxygen concentration in sputtering gas.

Image of FIG. 2.
FIG. 2.

Dependence of piezoelectric response of AlN films on oxygen concentration in sputtering gas.

Image of FIG. 3.
FIG. 3.

(a) Cross sectional SEM image of AlN film prepared at an oxygen concentration of 2.8%. (b) Dependence of growth rate of AlN films on oxygen concentration in sputtering gas.

Image of FIG. 4.
FIG. 4.

Dependence of oxygen concentration of AlN films on oxygen concentration in sputtering gas.

Tables

Generic image for table
Table I.

Sputtering conditions of AlN films.

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/content/aip/journal/apl/93/2/10.1063/1.2957654
2008-07-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2957654
10.1063/1.2957654
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