1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Impact of oxygen incorporation at the interface on retention characteristics for nonvolatile memory applications
Rent:
Rent this article for
USD
10.1063/1.2957668
/content/aip/journal/apl/93/2/10.1063/1.2957668
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2957668
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A cross-sectional HRTEM image of an As-dep sample. Inset shows the HRTEM image of a PDA sample.

Image of FIG. 2.
FIG. 2.

(a) The Si XPS spectra near the intermixed region of As-dep, PDA, HPOA, and HPDOA samples. (b) The BE shifts of Si after oxygen incorporation.

Image of FIG. 3.
FIG. 3.

(a) The Al XPS spectra near the intermixed region of As-dep, PDA, HPOA, and HPDOA samples. (b) The of Al after oxygen incorporation.

Image of FIG. 4.
FIG. 4.

Retention characteristics with various gate biases at . The inset shows the program saturation of trapped charge density of a PDA sample with increasing the program voltage at a constant time of .

Loading

Article metrics loading...

/content/aip/journal/apl/93/2/10.1063/1.2957668
2008-07-14
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of oxygen incorporation at the Si3N4∕Al2O3 interface on retention characteristics for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2957668
10.1063/1.2957668
SEARCH_EXPAND_ITEM