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Influence of ratio in multilayer structures on crystalline growth of thin film on Si substrate
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10.1063/1.2957990
/content/aip/journal/apl/93/2/10.1063/1.2957990
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2957990
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of films formed with deposited ratios of 1.0, 2.0, and 2.6. The inset highlights the diffraction peak, where the vertical axis is in logarithmic scale.

Image of FIG. 2.
FIG. 2.

AES depth profiles of Si and Fe atoms obtained from films with deposited ratios of 1.0, 2.0, and 2.6.

Image of FIG. 3.
FIG. 3.

Representative cross-sectional TEM images of films at interface regions. They were formed with deposited ratios of (a) 1.0, (b) 2.0 and (c) 2.6.

Image of FIG. 4.
FIG. 4.

ESR spectra of films formed with deposited ratios of 1.0, 2.0, and 2.6. The components of Si substrates have been removed from the original ESR spectra by subtracting their signals after etching films with diluted HF.

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/content/aip/journal/apl/93/2/10.1063/1.2957990
2008-07-15
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of Si∕Fe ratio in multilayer structures on crystalline growth of β-FeSi2 thin film on Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2957990
10.1063/1.2957990
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