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Schematic diagram of the epitaxial layers and device structure of an crystal used for a double heterojunction TL. The active region is composed of three strained QWs incorporated in the -type base and cladding structure.
Collector characteristics of the TL of Fig. 1 emitter) operated at . The dotted line indicates the bias at . Points (a) and (b) correspond to the bias conditions for the lasing spectra shown in Fig. 4. The inset shows the compression of the dc gain as the device is cooled from (dashed lines) to (solid lines).
CW operation optical emission intensity (recombination radiation) as a function of base current from a single facet of the TL of Fig. 1 operating at with (solid line) and (dashed line).
CW operation recombination radiation spectra corresponding to the transistor characteristics of the TL of Fig. 2 with a base current of and collector to emitter voltage bias points of (a) and (b) .
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