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Transistor laser with emission wavelength at
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10.1063/1.2958228
/content/aip/journal/apl/93/2/10.1063/1.2958228
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2958228
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the epitaxial layers and device structure of an crystal used for a double heterojunction TL. The active region is composed of three strained QWs incorporated in the -type base and cladding structure.

Image of FIG. 2.
FIG. 2.

Collector characteristics of the TL of Fig. 1 emitter) operated at . The dotted line indicates the bias at . Points (a) and (b) correspond to the bias conditions for the lasing spectra shown in Fig. 4. The inset shows the compression of the dc gain as the device is cooled from (dashed lines) to (solid lines).

Image of FIG. 3.
FIG. 3.

CW operation optical emission intensity (recombination radiation) as a function of base current from a single facet of the TL of Fig. 1 operating at with (solid line) and (dashed line).

Image of FIG. 4.
FIG. 4.

CW operation recombination radiation spectra corresponding to the transistor characteristics of the TL of Fig. 2 with a base current of and collector to emitter voltage bias points of (a) and (b) .

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/content/aip/journal/apl/93/2/10.1063/1.2958228
2008-07-15
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transistor laser with emission wavelength at 1544nm
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2958228
10.1063/1.2958228
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