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Emission properties of high- silicon nitride photonic crystal heterostructure cavities
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) SEM image of one of the fabricated double-heterostructure cavities. The red shading indicates the region where the lattice constant was increased from . [(b) and (c)] Absolute value of the electric field distribution of the and modes, respectively, obtained from FDTD calculations.

Image of FIG. 2.
FIG. 2.

(a) Spectrum of the intrinsic fluorescence emission from a SiN double-heterostructure cavity (black), collected without (no pol) and with polarization filtering along ( pol) and perpendicular ( pol) to the waveguide axis, respectively. Corresponding reference spectra (gray) from a PC region away from the waveguide are shown for comparison. (b) Zoom into the fundamental cavity resonance [indicated red in (a)]. The red curve represents a Lorentzian fit to the experimental data.

Image of FIG. 3.
FIG. 3.

Measured quality factors of a series of 20 identical cavities, plotted vs the corresponding resonance wavelengths , for the (circles) and (squares) modes, respectively. The corresponding standard deviations and are given as well.

Image of FIG. 4.
FIG. 4.

Far-field distribution of the and component (absolute value, logarithmic scale) for the (upper row) and (bottom row) mode, respectively. An additional vector rotation was applied to account for the collimation through the microscope objective. The dashed circle indicates the emission cone collected in the experiment.

Image of FIG. 5.
FIG. 5.

Degree of polarization as a function of the collection angle of the microscope objective for the (circles) and (squares) modes, respectively. Positive (negative) values mean polarization in direction. The corresponding result for the fundamental mode of a SiN L3 cavity (Ref. 9) (open circles) is shown for comparison. The vertical dashed line indicates the collection angle of the microscope objective used in these studies.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Emission properties of high-Q silicon nitride photonic crystal heterostructure cavities