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Reduction of thermal conductivity in wafer-bonded silicon
8.F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford, and V. M. Robbins, Appl. Phys. Lett. 64, 2839 (1994).
11.Bonding of stacks of SiC wafers (both patterned and unpatterned) have also been achieved in two separate experiments. SiC wafers were provided by R. J. Molnar.
12.Since the patterned tall dots, when used, could not be discerned by unaided eyes, no effort was made to distinguish the patterned and unpatterned sides in this assembly process. The probabilities of having patterned dots in between a given pair of adjacent chips are 0.5 for one dot pattern on either one of the two sides, 0.25 for dot patterns on both sides, and 0.25 for no dot pattern at all.
13.F. P. Incropera and D. P. DeWitt, Fundamentals of Heat and Mass Transfer (Wiley, New York, 1996), p. 74.
14.M. M. Yovanovich, Y. S. Muzychka, and J. R. Culham, J. Thermophys. Heat Transfer 13, 495 (1999).
16.G. S. Springer, in Advances in Heat Transfer, edited by T. F. Irvine and J. P. Hartnett (Academic, New York, 1971), p. 163.
18.Z. L. Liau, MIT Lincoln Laboratory Solid State Research Report No. 3 (2003).
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