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High temperature stability of postgrowth annealed transparent and conductive ZnO:Al films
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10.1063/1.2959071
/content/aip/journal/apl/93/2/10.1063/1.2959071
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2959071

Figures

Image of FIG. 1.
FIG. 1.

Transmittance and absorption characteristics of thick AZO films grown at and postgrowth annealed in and FG.

Image of FIG. 2.
FIG. 2.

The effect of annealing time on film resistivity for films grown at different oxygen pressures. Annealing was carried out in FG at .

Image of FIG. 3.
FIG. 3.

The film resistance change as a function of stress temperature in air. Stress time at each temperature was . Resistivity measurements were made at room temperature. (Open symbols: unpassivated; filled symbols: passivated).

Image of FIG. 4.
FIG. 4.

Long-term temperature stress tests for FG-annealed (, ) and passivated films prepared at and oxygen pressures.

Tables

Generic image for table
Table I.

Resistivity values for thick AZO films before and after annealing in air, nitrogen and FG.

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/content/aip/journal/apl/93/2/10.1063/1.2959071
2008-07-15
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High temperature stability of postgrowth annealed transparent and conductive ZnO:Al films
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2959071
10.1063/1.2959071
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