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Photoluminescence from localized states in disordered indium nitride
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10.1063/1.2959185
/content/aip/journal/apl/93/2/10.1063/1.2959185
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2959185
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical PL spectra measured at from the two samples, sample A and sample B, studied here. The InGaAs array detector has a sharp cutoff below around . Since the fits to the Gaussian waveform (solid lines) is very good, the measurement accuracy is not limited by our inability to capture the complete emission spectra.

Image of FIG. 2.
FIG. 2.

(circles) Diamagnetic shift at of sample A and sample B averaged over many data points. Error bars are indicative of the scatter in the raw data. (Solid line) fit to a quadratic function . Note the absolute magnitude of the shift for both the samples is very small.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the (a) linewidth and (b) shift in the peak PL energy for sample B. Nonmonotonic behavior of both indicates a strong role of carrier localization. (b) Solid line (labeled Varshni) is the shift expected from the intrinsic bandgap change and dotted line is just to guide the eye.

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/content/aip/journal/apl/93/2/10.1063/1.2959185
2008-07-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence from localized states in disordered indium nitride
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2959185
10.1063/1.2959185
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