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Nonvolatile electrical bistability and operating mechanism of memory devices based on CdSe/ZnS nanoparticle/polymer hybrid composites
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10.1063/1.2959786
/content/aip/journal/apl/93/2/10.1063/1.2959786
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2959786

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of the CdSe nanoparticles embedded in the layer and (b) a cross-sectional analysis of the selected region between the two arrows shown in (a). The region between the dashed lines corresponds to the CdSe nanoparticle.

Image of FIG. 2.
FIG. 2.

Current-voltage curves for the nanoparticles embedded in the PVK, PS, or polymer layer/ITO devices.

Image of FIG. 3.
FIG. 3.

Schematics of the electronic structures corresponding to the operating mechanisms of the charge-capturing and the charge-storing processes for the nanoparticles embedded in the polymer layer/ITO/glass device under a positive bias voltage. The energy levels for the CdSe nanoparticles are taken from Ref. 15, and those for the PVK and the PS layer are taken from Refs. 16 and 17, respectively.

Image of FIG. 4.
FIG. 4.

Capacitance-voltage curve for the nanoparticles embedded in the hybrid polymer layer/ITO device.

Tables

Generic image for table
Table I.

The on/off ratios of characteristics and the flatband voltage shifts of characteristics for the OBD with various active polymer matrices.

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/content/aip/journal/apl/93/2/10.1063/1.2959786
2008-07-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile electrical bistability and operating mechanism of memory devices based on CdSe/ZnS nanoparticle/polymer hybrid composites
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2959786
10.1063/1.2959786
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