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Surface XPS analyses of the binding states around the , O1s, and core level after (a) Ge cleaning,(b) postplasma oxidation with gas, and (c) post plasma oxynitridation with gas.
(a) Evolution of the nitrogen/oxygen ratio profiles as a function of the take-off angle (measured with AR-XPS) into the germanium oxynitride layer. (b) Electron density profile extracted from XRR measurements.
HR-TEM observation of the final GeOI substrates with the oxynitride back interlayer. Corresponding SIMS profiles are also shown in insert.
Pseudo-MOSFET drain-current measurements in (a) accumulation and (b) inversion regimes for and .
Comparison of electron and hole mobility extracted from pseudo-MOSFET measurements on GeOI substrates.
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