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Germanium oxynitride as a back interface passivation layer for Germanium-on-insulator substrates
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10.1063/1.2960345
/content/aip/journal/apl/93/2/10.1063/1.2960345
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2960345

Figures

Image of FIG. 1.
FIG. 1.

Surface XPS analyses of the binding states around the , O1s, and core level after (a) Ge cleaning,(b) postplasma oxidation with gas, and (c) post plasma oxynitridation with gas.

Image of FIG. 2.
FIG. 2.

(a) Evolution of the nitrogen/oxygen ratio profiles as a function of the take-off angle (measured with AR-XPS) into the germanium oxynitride layer. (b) Electron density profile extracted from XRR measurements.

Image of FIG. 3.
FIG. 3.

HR-TEM observation of the final GeOI substrates with the oxynitride back interlayer. Corresponding SIMS profiles are also shown in insert.

Image of FIG. 4.
FIG. 4.

Pseudo-MOSFET drain-current measurements in (a) accumulation and (b) inversion regimes for and .

Tables

Generic image for table
Table I.

Comparison of electron and hole mobility extracted from pseudo-MOSFET measurements on GeOI substrates.

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/content/aip/journal/apl/93/2/10.1063/1.2960345
2008-07-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/2/10.1063/1.2960345
10.1063/1.2960345
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