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Schematic diagrams of (a) PSS-SR-LED, (b) Si-SR-LED, and (c) Si-DR-LED. The insets in (b) and (c) represent the scanning electron micrograph images taken at an oblique angle from the micropillar u-GaN after a removal of PSS and further followed by chemical wet etching, respectively.
Reflectivity vs incident angle for the glue/ ODR and structures. The reflectivity of glue ODR was also simulated by optical software. Inset is the cross section of GaN LED/glue real sample measured by scanning electron microscope.
Light output power and light extraction efficiency of LEDs as a function of injection current.
Junction temperature vs dc forward current for the blue-InGaN LEDs.
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