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Equivalent circuit of one node at position , which corresponds to image pixel , containing a current source , the dark current , and a series resistance .
curves of one node at two illumination intensities with and . Solid curves are the characteristics without series resistance (i.e., current density as a function of the diode voltage). Broken curves include the effect of series resistance of . The solid vertical line represents the diode voltage , corresponding to terminal voltages and .
Offset-corrected luminescence signal as a function of changed operation condition between image A and image B or values of according to Eq. (3). The luminescence intensity in measurement B, which corresponds to measurement A, determines the correct value for the series resistance.
Left: PL image of one-half of a mc-Si solar cell at condition. Variations in lifetime and diode characteristics are visible. Bright regions represent high voltage/accordingly lifetime. Right: -image created by proposed method of the same part of solar cell. The values are nearly free of effects of varying diode characteristics and lifetimes.
Left: Corescan image showing the voltage drop toward the terminal. Right: -image of the same part of solar cell. Identical areas of high series resistance are observed in both images.
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