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Merged phototransistor pixel with enhanced near infrared response and flicker noise reduction for biomolecular imaging
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10.1063/1.3002320
/content/aip/journal/apl/93/20/10.1063/1.3002320
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3002320
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Inverted staggered photo-TFT with 300 nm and 50 nm layers fabricated using PECVD.

Image of FIG. 2.
FIG. 2.

Effect of bias on the responsivity of the photo-TFT. The responsivity is extracted by using an arc lamp (Oriel 66181) in series with a monochromator (Oriel 77200), both calibrated with a silicon sensor (Newport 818-UV). The monochromator’s output spectrum is as indicated—its output is at 500 nm wavelength. The measured photocurrents are normalized to the photocurrent at 500 nm.

Image of FIG. 3.
FIG. 3.

Photocurrent as a function of illumination intensity of photo-TFT under various gate biases. The illumination is generated by a red LED (Avago Tech, HLMP-1301) with a peak at 635 nm wavelength.

Image of FIG. 4.
FIG. 4.

(a) Merged photo-TFT pixel circuit and (b) pixel photomicrograph.

Image of FIG. 5.
FIG. 5.

Photocurrent of the merged photo-TFT pixel. For readout of the photocurrent, a transresistance amplifier with a gain of 48 is used. Also shown is the response of a single photo-TFT in which and .

Image of FIG. 6.
FIG. 6.

(a) Noise measurement setup and (b) noise power current spectral density at dc and under switched biasing.

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/content/aip/journal/apl/93/20/10.1063/1.3002320
2008-11-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Merged phototransistor pixel with enhanced near infrared response and flicker noise reduction for biomolecular imaging
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3002320
10.1063/1.3002320
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