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Inverted staggered photo-TFT with 300 nm and 50 nm layers fabricated using PECVD.
Effect of bias on the responsivity of the photo-TFT. The responsivity is extracted by using an arc lamp (Oriel 66181) in series with a monochromator (Oriel 77200), both calibrated with a silicon sensor (Newport 818-UV). The monochromator’s output spectrum is as indicated—its output is at 500 nm wavelength. The measured photocurrents are normalized to the photocurrent at 500 nm.
Photocurrent as a function of illumination intensity of photo-TFT under various gate biases. The illumination is generated by a red LED (Avago Tech, HLMP-1301) with a peak at 635 nm wavelength.
(a) Merged photo-TFT pixel circuit and (b) pixel photomicrograph.
Photocurrent of the merged photo-TFT pixel. For readout of the photocurrent, a transresistance amplifier with a gain of 48 is used. Also shown is the response of a single photo-TFT in which and .
(a) Noise measurement setup and (b) noise power current spectral density at dc and under switched biasing.
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