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Doping of core-shell nanowires using low energy ion implantation
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10.1063/1.3013335
/content/aip/journal/apl/93/20/10.1063/1.3013335
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3013335
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic representation of a core-shell NW dispersed onto a substrate. (b) SEM of a NW device. The drain current flows from source to drain , and and are used to probe the voltage drop along the NW.

Image of FIG. 2.
FIG. 2.

(a) vs data measured for NWs implanted with different B doses. The data show a conductance increase with the implant dose. (b) vs measured at different values for a B-implanted NW with a dose of .

Image of FIG. 3.
FIG. 3.

(a) Activated dopant concentration vs the activation temperature for different implant doses. (b) Activated dopant dose per unit area vs the implant dose. These data show that roughly 15%–25% of the implanted ions are active dopants in the NWs.

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/content/aip/journal/apl/93/20/10.1063/1.3013335
2008-11-20
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping of Ge–SixGe1−x core-shell nanowires using low energy ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/20/10.1063/1.3013335
10.1063/1.3013335
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